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By company (ARL)
February 2006
The Next 3rd Gen
Researchers at the U.S. Army Research Laboratory, ARL, in cooperation with Rockwell Scientific Corp. are making significant progress toward being able to fabricate MCT (mercury cadmium telluride) FPAs by Molecular Beam Epitaxy (MBE) directly on composite silicon substrates. Recently, they succeeded in making 256 x 256 pixel LWIR MCT FPAs (40 µm pitch) on silicon substrates having a lattice-matched CdSeTe buffer layer. Initial results indicate an NETD of 33 mK for a cut-off wavelength of 10 µm. Operability (fraction of usable pixels) was measured to be 99%.
January 2006
ARL and BAE Systems Team on T2SL FPAs
Researchers from the Army Research Laboratory, ARL are teaming with BAE Systems under the Advanced Sensor Collaborative Technology Alliance (CTA) program to make mid-wave Type II Superlattice (T2SL) focal plane arrays. The semiconductor layers (InAs on a GaSb substrate) were grown by ARL and the FPA processing and hybridization to an Indigo ISC9809 read-out IC (ROIC) were carried out at BAE Systems.
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